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may 2010 ? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 fsfr-us series ? fairchild power switch (fps ? ) for half-bridge resonant converter fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converters features ? variable frequency control with 50% duty cycle for half-bridge resonant converter topology ? high efficiency through zero voltage switching (zvs) ? internal unifet?s with fast-recovery type body diode ? fixed dead time (350ns) optimized for mosfets ? up to 300khz operating frequency ? auto-restart operation for all protections with an external lv cc ? protection functions: over-voltage protection (ovp), over-current protection (ocp), abnormal over-current protection (aocp), internal thermal shutdown (tsd) applications ? pdp and lcd tvs ? desktop pcs and servers ? adapters ? telecom power supplies description the fsfr-us series are a highly integrated power switches designed for high-efficiency half-bridge resonant converters. offering everything necessary to build a reliable and robust resonant converter, the fsfr- us series simplifies designs and improves productivity, while improving performance. the fsfr-us series combines power mosfets with fast-recovery type body diodes, a high-side gate-drive circuit, an accurate current controlled oscillator, frequency limit circuit, soft-start, and built-in protection functions. the high-side gate-drive circuit has a common-mode noise cancellation capability, which guarantees stable operation with excellent noise immunity. the fast-recovery body diode of the mosfets improves reliability against abnormal operation conditions, while minimizing the effect of the reverse recovery. using the zero-voltage-switching (zvs) technique dramatically reduces the switching losses and efficiency is significantly improved. the zvs also reduces the switching noise noticeably, which allows a small-sized electromagnetic interference (emi) filter. the fsfr-us series can be applied to various resonant converter topologies such as series resonant, parallel resonant, and llc resonant converters. related resources an4151 ? half-bridge llc resonant converter design using fsfr-series fairchild power switch (fps tm ) ordering information part number package operating junction temperature r ds(on_max) maximum output power without heatsink (v in =350~400v) (1,2) maximum output power with heatsink (v in =350~400v) (1,2) fsfr2100us 9-sip -40 to +130c 0.51 180w 400w fsfr1800us 0.95 120w 260w FSFR1700US 1.25 100w 200w fsfr2100usl 9-sip l-forming 0.51 180w 400w fsfr1800usl 0.95 120w 260w FSFR1700USl 1.25 100w 200w notes: 1. the junction temperature can limit the maximum output power. 2. maximum practical continuous power in an open-frame design at 50 c ambient.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 2 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter application circuit diagram figure 1. typical application circuit ( llc resonant half-bridge converter) block diagram figure 2. internal block diagram
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 3 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter pin configuration figure 3. package diagram pin definitions pin # name description 1 v dl this is the drain of the high-side mosfet, typically connected to the input dc link voltage. 2 ar this pin is for discharging the external soft-start capacitor when any protections are triggered. when the voltage of this pin drops to 0.2, all protections are reset and the controller starts to operate again. 3 r t this pin programs the switching frequency. typically, an opto-coupler is connected to control the switching frequency for the output voltage regulation. 4 cs this pin senses the current flowing through the low-side mosfet. typically, negative voltage is applied on this pin. 5 sg this pin is the control ground. 6 pg this pin is the power ground. this pin is connected to the source of the low-side mosfet. 7 lv cc this pin is the supply voltage of the control ic. 8 nc no connection. 9 hv cc this is the supply voltage of the high-side gate-drive circuit ic. 10 v ctr this is the drain of the low-side mosfet. typically, a transformer is connected to this pin.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 4 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. t a =25 c unless otherwise specified. symbol parameter min. max. unit v ds maximum drain-to-source voltage (v dl -v ctr and v ctr -pg) 500 v lv cc low-side supply voltage -0.3 25.0 v hv cc to v ctr high-side v cc pin to low-side drain voltage -0.3 25.0 v hv cc high-side floating supply voltage -0.3 525.0 v v ar auto-restart pin input voltage -0.3 lv cc v v cs current sense (cs) pin input voltage -5.0 1.0 v v rt r t pin input voltage -0.3 5.0 v dv ctr /dt allowable low-side mosfet drain voltage slew rate 50 v/ns p d total power dissipation (3) fsfr2100us/l 12.0 w fsfr1800us/l 11.7 FSFR1700US/l 11.6 t j maximum junction temperature (4) +150 c recommended operating junction temperature (4) -40 +130 t stg storage temperature range -55 +150 c notes: 3. per mosfet when both mosfets are conducting. 4. the maximum value of the recommended operating junction temperature is limited by thermal shutdown.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 5 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter absolute maximum ratings (continued) symbol parameter min. max. unit mosfet section v dgr drain gate voltage (r gs =1m ) 500 v v gs gate source (gnd) voltage 30 v i dm drain current pulsed (5) fsfr2100us/l 32 a fsfr1800us/l 23 FSFR1700US/l 20 i d continuous drain current fsfr2100us/l t c =25 c 10.5 a t c =100 c 6.5 fsfr1800us/l t c =25 c 7.0 t c =100 c 4.5 FSFR1700US/l t c =25 c 6.0 t c =100 c 3.9 package section torque recommended screw torque 5~7 kgfcm notes: 5. pulse width is limited by maximum junction temperature. thermal impedance t a =25 c unless otherwise specified. symbol parameter value unit jc junction-to-case center thermal impedance (both mosfets conducting) fsfr2100us/l 10.44 oc/w fsfr1800us/l 10.68 FSFR1700US/l 10.79
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 6 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter electrical characteristics t a =25 c unless otherwise specified. symbol parameter test conditions specifications unit min. typ. max. mosfet section bv dss drain-to-source breakdown voltage i d =200 a, t a =25 c 500 v i d =200 a, t a =125 c 540 r ds(on) on-state resistance fsfr2100us/l v gs =10v, i d =6.0a 0.41 0.51 fsfr1800us/l v gs =10v, i d =3.0a 0.77 0.95 FSFR1700US/l v gs =10v, i d =2.0a 1.00 1.25 t rr body diode reverse recovery time (6) fsfr2100us/l v gs =0v, i diode =12.0a, di diode /dt=100a/ s 120 ns fsfr1800us/l v gs =0v, i diode =7.0a, di diode /dt=100a/ s 160 FSFR1700US/l v gs =0v, i diode =6.0a, di diode /dt=100a/ s 160 supply section i lk offset supply leakage current h-v cc =v ctr =500v 50 a i q hv cc quiescent hv cc supply current (hv cc uv+) - 0.1v 50 120 a i q lv cc quiescent lv cc supply current (lv cc uv+) - 0.1v 100 200 a i o hv cc operating hv cc supply current (rms value) f osc =100khz 6 9 ma no switching 100 200 a i o lv cc operating lv cc supply current (rms value) f osc =100khz 7 11 ma no switching 2 4 ma uvlo section lv cc uv+ lv cc supply under-voltage positive going threshold (lv cc start) 11.2 12.5 13.8 v lv cc uv- lv cc supply under-voltage negative going threshold (lv cc stop) 8.90 10.0 11.1 v lv cc uvh lv cc supply under-voltage hysteresis 2.50 v hv cc uv+ hv cc supply under-voltage positive going threshold (hv cc start) 8.2 9.2 10.2 v hv cc uv- hv cc supply under-voltage negative going threshold (hv cc stop) 7.8 8.7 9.6 v hv cc uvh hv cc supply under-voltage hysteresis 0.5 v
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 7 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter electrical characteristics (continued) t a =25 c unless otherwise specified. symbol parameter test conditions specifications unit min typ max oscillator & feedback section v rt v-i converter threshold voltage r t =5.2k 1.5 2.0 2.5 v f osc output oscillation frequency 94 100 106 khz dc output duty cycle 48 50 52 % f ss internal soft-start initial frequency f ss =f osc +40khz, r t =5.2k 140 khz t ss internal soft-start time 2 3 4 ms protection section v cssh beginning voltage to discharge c ss 0.9 1.0 1.1 v v cssl beginning voltage to charge c ss and restart 0.16 0.20 0.24 v v ovp lv cc over-voltage protection l-v cc > 21v 21 23 25 v v aocp aocp threshold voltage v/ t=-0.1v/s -1.0 -0.9 -0.8 v t bao aocp blanking time (6) v cs < v aocp ; v/ t=-0.1v/s 50 ns v ocp ocp threshold voltage v/ t=-1v/s -0.64 -0.58 -0.52 v t bo ocp blanking time (6) v cs < v ocp ; v/ t=-1v/s 1.0 1.5 2.0 s t da delay time (low side) detecting from v aocp to switch off (6) v/ t=-1v/s 250 400 ns t sd thermal shutdown temperature (6) 120 135 150 c dead-time control section d t dead time (7) 350 ns notes: 6. this parameter, although guaranteed, is not tested in production. 7. these parameters, although guaranteed, are tested only in eds (wafer test) process.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 8 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter typical performance characteristics these characteristic graphs are normalized at t a =25oc. 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c temp ( o c) 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 normalized at 25 o c figure 4. low-side mosfet duty cycle vs. temperature figure 5. switching freq uency vs. temperature 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c figure 6. high-side v cc (h v cc ) start vs. temperature figure 7. high-side v cc (h v cc ) stop vs. temperature 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c figure 8. low-side v cc (l v cc ) start vs. temperature figure 9. low-side v cc (l v cc ) stop vs. temperature
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 9 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter typical performance characteristics (continued) these characteristic graphs are normalized at t a =25oc. 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c figure 10. lv cc ovp voltage vs. temperature figure 11. r t v oltage vs. temperature 0.90 0.95 1.00 1.05 1.10 -50-25 0 255075100 normalized at 25 ( temp( ( ) 0.90 0.95 1.00 1.05 1.10 -50-25 0 255075100 normalized at 25 ( temp( ( ) figure 12. v cssl vs. temperature figure 13. v cssh vs. temperature 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 temp ( o c) normalized at 25 o c figure 14. ocp voltage vs. temperature
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 10 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter functional description 1. basic operation: fsfr-us series is designed to drive high-side and low-side mosfets complementarily with 50% duty cycle. a fixed dead time of 350ns is introduced between consecutive transitions, as shown in figure 15. figure 15. mosfets gate drive signal 2. internal oscillator : fsfr-us series employs a current-controlled oscillator, as shown in figure 16. internally, the voltage of r t pin is regulated at 2v and the charging / discharging current for the oscillator capacitor, c t , is obtained by copying the current flowing out of the r t pin (i ctc ) using a current mirror. therefore, the switching frequency increases as i ctc increases. figure 16. current controlled oscillator 3. frequency setting : figure 17 shows the typical voltage gain curve of a resonant converter, where the gain is inversely proportional to the switching frequency in the zvs region. the output voltage can be regulated by modulating the switching frequency. figure 18 shows the typical circuit configuration for the r t pin, where the opto-coupler transistor is connected to the r t pin to modulate the switching frequency. the minimum switching frequency is determined as: min min 5.2 100( ) k f khz r = (1) assuming the saturation voltage of opto-coupler transistor is 0.2v, the maximum switching frequency is determined as: max min max 5.2 4.68 ( ) 100( ) kk fkhz rr ? =+ (2) figure 17. resonant converter typical gain curve fsfr-us figure 18. frequency control circuit to prevent excessive inrush current and overshoot of output voltage during startup, increase the voltage gain of the resonant converter progressively. since the voltage gain of the resonant converter is inversely proportional to the switching frequency, the soft-start is implemented by sweeping down the switching frequency from an initial high frequency ( f iss ) until the output voltage is established. the soft-start circuit is made by connecting r-c series network on the r t pin, as shown in figure 18. fsfr-us series also has an internal soft- start for 3ms to reduce the current overshoot during the initial cycles, which adds 40khz to the initial frequency of the external soft-start circuit, as shown in figure 19. the initial frequency of the soft-start is given as: min 5.2 5.2 ()10040() iss ss kk fkhz rr =++ (3)
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 11 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter it is typical to set the initial frequency of soft-start two to three times the resonant frequency ( f o ) of the resonant network. the soft-start time is three to four times of the rc time constant. the rc time constant is as follows: ss ss c r ? = (4) figure 19. frequency sweeping of soft-start 4. self auto-restart : the fsfr-us series can restart automatically even though any built-in protections are triggered with external supply voltage. as can be seen in figure 20 and figure 21, once any protections are triggered, m1 switch turns on and v-i converter is disabled. c ss starts to be discharged until v css across c ss drops to v cssl . then, all protections are reset, m1 turns off, and v-i converter resumes at the same time. the fsfr-us starts switching again with soft-start. if the protections occur while v css is under v cssl and v cssh level, the switching is terminated immediately, v css continues to increase until reaching v cssh , then c ss is discharged by m1. figure 20. internal block of ar pin after protections trigger, fsfr-us is disabled during the stop-time, t stop , where v css decreases and reaches to v cssl . the stop-time of fsfr-us can be estimated as: () {} = ? = k 5 || r r c t min ss ss stop (5) for the soft-start time, t s/s it can be set as equation (4). lv cc i cr v ar t stop t s/s v cssh (a) (a) (a) (b) (b) (a) protections are triggered, (b) fsfr-us restarts v cssl (b) figure 21. self auto-restart operation 5. protection circuits : the fsfr-us series has several self-protective functions, such as over-current protection (ocp), abnormal over-current protection (aocp), over- voltage protection (ovp), and thermal shutdown (tsd). these protections are auto-restart mode protections as shown in figure 22. once a fault condition is detected, switching is terminated and the mosfets remain off. when lv cc falls to the lv cc stop voltage of 10v or ar signal is high, the protection is reset. the fsfr-us resumes normal operation when lv cc reaches the start voltage of 12.5v. figure 22. protection blocks 5.1 over-current protection (ocp) : when the sensing pin voltage drops below -0.58v, ocp is triggered and the mosfets remain off. this protection has a shutdown time delay of 1.5s to prevent premature shutdown during startup. 5.2 abnormal over-current protection (aocp) : if the secondary rectifier diodes are shorted, large current with extremely high di/dt can flow through the mosfet before ocp is triggered. aocp is triggered without shutdown delay when the sensing pin voltage drops below -0.9v.
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 12 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter 5.3 over-voltage protection (ovp) : when the lv cc reaches 23v, ovp is triggered. this protection is used when auxiliary winding of the transformer to supply v cc to fps is utilized. 5.4 thermal shutdown (tsd) : the mosfets and the control ic in one package makes it easy for the control ic to detect the abnormal over-temperature of the mosfets. if the temperature exceeds approximately 130 c, the thermal shutdown triggers. 6. current sensing using resistor: fsfr-us series senses drain current as a negative voltage, as shown in figure 23 and figure 24. half-wave sensing allows low power dissipation in the sensing resistor, while full-wave sensing has less switching noise in the sensing signal. control ic cs sg pg ns np ns r sense ids cr i ds v cs v cs figure 23. half-wave sensing control ic cs sg pg r sense ids v cs i ds v cs ns np ns cr figure 24. full-wave sensing 7. pcb layout guidelines : duty unbalance problems may occur due to the radiated noise from main transformer, the inequality of the secondary side leakage inductances of main transformer, and so on. among them, it is one of the dominant reasons that the control components in the vicinity of r t pin are enclosed by the primary current flows pattern on pcb layout. the direction of the magnetic field on the components caused by the primary current flow is changed when the high-and low-side mosfet turn on by turns. the magnetic fields with opposite directions induce a current through, into, or out of the r t pin, which makes the turn-on duration of each mosfet different. it is strongly recommended to separate the control components in the vicinity of r t pin from the primary current flow pattern on pcb layout. figure 25 shows an example for the duty-balanced case. figure 25. example for duty balancing
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 13 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter physical dimensions sipmodaa09reva notes: unless otherwise specified a) this package does not comply to any current packaging standard. b) all dimensions are in millimeters. c) dimensions are exclusive of burrs, mold flash, and tie bar extrusions. 26.20 25.80 23.10 22.90 3.40 3.00 0.60 0.40 3.48 2.88 3.40 3.00 1.27 15.24 5.35 5.15 (5.08) max 1.30 max 0.80 (1.70) (1.20) (r0.50) r0.55 r0.55 14.50 13.50 (7.00) (0.50) 18.50 17.50 1.30 1.10 10.70 10.30 8.00 7.00 (0.70) (11.00) (r0.50) 0.70 0.50 figure 26. 9-sip package package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ .
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 14 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter physical dimensions figure 27. 9-sip l-forming package package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ .
? 2009 fairchild semiconductor corporation www.fairchildsemi.com fsfr-us series ? rev.1.0.2 15 fsfr-us series ? fairchild power switch (fps?) for half-bridge resonant converter

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